AVAILABLE ON-DEMAND
This webinar was originally held on June 12, 2024.
How to Test GaN and SiC MOSFET and IGBT Devices
Join Teledyne LeCroy to learn more about how to test and qualify GaN MOSFETs, SIC MOSFETs and Si IGBTs using the double-pulse test circuit and high voltage isolated probes. Learn how you can use your benchtop test instruments to effectively (and safely) analyse your circuits in a qualitative and quantitative manner.
Topics to be covered in this webinar include:
- Double-pulse testing example (both low and high-side of a half bridge)
- Test instrument consideration
- Testing safely
- Deskewing probes
- Switching loss, conduction loss and efficiency measurements
- Reverse recovery measurements
Who should attend? Hardware engineers, systems engineers, production engineers, technicians testing GaN MOSFETs, SiC MOSFETs and Si IGBTs.
What attendees will learn: Attendees will learn how to perform the double-pulse test safely and how to capture and characterize your device’s dynamic response.
Presenter:
William Kaunds, Product Manager, Teledyne LeCroy